RAPS: an innovative active pixel for particle detection integrated in CMOS technology

• DOI: 10.1016/j.nima.2003.11.063
• Publication Date: 2003-12-09T11:55:53Z
• Authors: Daniele Passeri; Pisana Placidi; Leonardo Verducci; Paolo Ciampolini; Guido Matrella; Alessandro Marras; Gian Mario Bilei
• Keywords: CMOS Sensor

In this paper we discuss some design, implementation and test issues, with respect to the development of the RAPS01 chip in the framework of the Radiation Active Pixel Sensors (RAPS) INFN project. The project aimed at verifying feasibility of smart, high-resolution pixel arrays with a fully standard, submicron CMOS technology for particle detection purposes. Layout optimization of the pixel, including sensitive element and local read and amplification circuits has been carried out. Different basic pixel schemes and read-out options have been proposed and devised. Chip fabrication has been completed and test phase is now under way: to this purpose a suitable test environment has been devised and test strategies have been planned.