Studies of bulk damage induced in different silicon materials by 900Mev electron irradiation

• DOI: 10.1016/j.nima.2005.03.032
• Publication Date: 2005-04-08T08:06:54Z
• Authors: S. Dittongo; L. Bosisio; D. Contarato; G. D’Auria; E. Fretwurst; J. Härkönen; G. Lindström; E. Tuovinen
• Keywords: Electron beam processing

Abstract Silicon test structures manufactured on different substrate materials (standard and oxygenated float-zone, magnetic and non-magnetic Czochralski, epitaxial silicon) have been irradiated with 900 MeV electrons up to a fluence of 6.1 × 10 15 e / cm 2 . Results are reported on the variation of the effective dopant concentration and of the leakage current density as a function of the electron fluence. The time evolution of the effective dopant concentration is also reported after thermal annealing cycles at 80 ∘ C .