SiC detectors for neutron monitoring

• DOI: 10.1016/j.nima.2005.06.018
• Publication Date: 2005-07-06T21:15:31Z
• Authors: C. Manfredotti; A. Lo Giudice; F. Fasolo; E. Vittone; C. Paolini; F. Fizzotti; A. Zanini; G. Wagner; C. Lanzieri
• Keywords: Neutron Detection; Semiconductor detector; Neutron radiation; Radiation hardening

Abstract Semiconductor detectors equipped with a converter like 6 LiF or 10 B can currently be considered a very interesting alternative to conventional neutron detectors, especially because of their compactness and reliability. The materials for the detection of the ions produced in the converter are generally either Si or GaAs. SiC detectors presented in this work are completely new devices which are proved to be very suitable for neutron detection, dosimetry and beam monitoring. Their capability to withstand high radiation doses should largely overcome the performances of Si and GaAs; moreover, because of the lower Z value, gamma-ray discrimination turns out to be more efficient. In this work, the results obtained with a series of large-area epitaxial SiC Schottky barrier detectors will be presented and discussed.