Development, simulation and processing of new 3D Si detectors

• DOI: 10.1016/j.nima.2007.08.207
• Publication Date: 2007-09-04T08:42:51Z
• Authors: Z. Li; W. Chen; Y.H. Guo; D. Lissauer; D. Lynn; V. Radeka; G. Pellegrini
• Keywords: Position (finance)

Abstract New 3D Si detector structures have been proposed by BNL at the end of 2005. Different from the traditional planar Si detector technology, 3D detector technology places p+ and n+ electrodes vertically through the entire detector thickness, thus involves 3D processing. Our new 3D structures have some new features either in configuration and/or in processing: (1) all electrodes are processed on one side of the wafer to ensure a simple, true one-sided processing; and (2) stripixel electrode configuration can be arranged to get 2D position sensitive strip-like detectors with single-sided processing. The processing of the first prototype detectors batch of the new 3D detectors with single-column (n+ column on p-type substrate) has begun. All n+ columns have been etched and the remaining planar processing are been finishing up. Dual electrode columns (p+ and n+) one-sided 3D Si detectors are planned for future prototype batches. Electric field simulations and estimation of CCE at SLHC fluences have been carried out for the new 3D Si detectors.