Design optimization of ultra-fast silicon detectors

• DOI: 10.1016/j.nima.2015.04.025
• Publication Date: 2015-04-25T18:13:15Z
• Authors: N. Cartiglia; R. Arcidiacono; M. Baselga; R. Bellan; M. Boscardin; F. Cenna; G.F. Dalla Betta; P. Fernndez-Martnez; M. Ferrero; D. Flores; Z. Galloway; V. Greco; S. Hidalgo; F. Marchetto; V. Monaco; M. Obertino; L. Pancheri; G. Paternoster; A. Picerno; G. Pellegrini; D. Quirion; F. Ravera; R. Sacchi; H.F.-W. Sadrozinski; A. Seiden; A. Solano; N. Spencer
• Keywords: Silicon; APD; Silicon | Fast detector | Low gain | APD | Charge multiplication; silicon; Charge multiplication; 530; Fast detector; 620; APD; Charge multiplication; Fast detector; Low gain; Silicon; Instrumentation; Nuclear and High Energy Physics; 03 medical and health sciences; 0302 clinical medicine; Low gain

Abstract Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.