Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

• DOI: 10.1016/j.nima.2017.01.021
• Publication Date: 2017-01-12T19:32:15Z
• Authors: N. Cartiglia; A. Staiano; V. Sola; R. Arcidiacono; R. Cirio; F. Cenna; M. Ferrero; V. Monaco; R. Mulargia; M. Obertino; F. Ravera; R. Sacchi; A. Bellora; S. Durando; M. Mandurrino; N. Minafra; V. Fadeyev; P. Freeman; Z. Galloway; E. Gkougkousis; H. Grabas; B. Gruey; C.A. Labitan; R. Losakul; Z. Luce; F. McKinney-Martinez; H.F.-W. Sadrozinski; A. Seiden; E. Spencer; M. Wilder; N. Woods; A. Zatserklyaniy; G. Pellegrini; S. Hidalgo; M. Carulla; D. Flores; A. Merlos; D. Quirion; V. Cindro; G. Kramberger; I. Mandić; M. Mikuž; M. Zavrtanik
• Keywords: Silicon Photomultiplier; Biasing

In this paper we report on the timing resolution of first production 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions 180 GeV/c momentum. UFSD are based Low-Gain Avalanche (LGAD) design, employing n-on-p silicon sensors internal charge multiplication due to presence thin, low-resistivity diffusion layer below junction. The used belongs thin (50 μm) sensors, an pad area 1.4 mm2. gain was measured vary between 5 and 70 depending bias voltage. experimental setup included three fast trigger consisting quartz bar readout by SiPM. resolution, determined comparing time arrival particle one or more counter, for single be 35 ps voltage 200 V, 26 240 combination 3 20 15 V.