Large-area vertical Schottky barrier diodes based on 4H-SiC epilayers: Temperature-dependent electrical characteristics
0103 physical sciences
01 natural sciences
DOI:
10.1016/j.nima.2022.167917
Publication Date:
2022-12-17T15:50:48Z
AUTHORS (7)
ABSTRACT
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (36)
CITATIONS (1)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....