Formation of bubbles and extended defects in He implanted (100) Si at elevated temperatures

• DOI: 10.1016/j.nimb.2004.01.148
• Publication Date: 2004-02-21T10:23:26Z
• Authors: Douglas L. da Silva; Marcio J. Mörschb...; Paulo F.P. Fichtner; Erwan Oliviero; Moni Behar
• Keywords: Elastic recoil detection; Liquid bubble; Recoil

Abstract The formation and thermal evolution of He bubbles and extended defects in Si are studied as a function of the implantation ( T i ) and annealing ( T a ) temperatures. (1 0 0) Si wafers were implanted with 40 keV He + ions to a fluence of 1 × 10 16 cm −2 at temperatures T i from 300 to 623 K. After the implantations the samples were submitted to thermal treatments for 600 s at temperatures T a from 673 to 1073 K. The samples were analyzed using transmission electron microscopy (TEM), Rutherford backscattering/channeling (RBS/C) and elastic recoil detection (ERD) techniques. The results obtained show that the microstructure characteristics of the bubble and the extended defect systems, as well as their thermal evolution behavior, depend significantly on the implantation temperature. A correlation between the dynamic annealing behavior and the bubble and defect formation process is proposed.