Electrically injected GeSn laser with stairs-structure based on SiN stressor

• DOI: 10.1016/j.optcom.2023.129847
• Publication Date: 2023-08-25T08:34:33Z
• Authors: Xinyang Sun; Bin Shu; Huiyong Hu; Liming Wang; Ningning Zhang; Tian Miao
• Keywords: Optical cavity

After decades of advancement, optoelectronic technology has emerged as a pivotal player in various domains such optical communication, interconnection, and computer However, the challenge integrating devices with complementary metal-oxide-semiconductor (CMOS) remains unresolved. Germanium, its unique band structure, can be transformed into direct bandgap semiconductor through introduction tensile strain, enabling efficient light emission. This provides solution for development integrated sources based on Group IV materials. A GeSn laser stairs-structure SiN stressor is proposed this paper. The combination high-stress film alloy allows modification Ge material, emission laser. facilitates higher strain material. utilizes an F–P resonator cavity. Through simulation experiments, exhibits threshold current density 90 kA/cm2 at room temperature, wavelength 2477 nm, electrical-to-optical conversion efficiency 6.5%.