Mechanisms of green emission from ZnO films prepared by rf magnetron sputtering

• DOI: 10.1016/j.optmat.2003.12.005
• Publication Date: 2004-01-17T10:15:06Z
• Authors: Q.P. Wang; D.H. Zhang; Z.Y. Xue; X.J. Zhang
• Keywords: 02 engineering and technology; 0210 nano-technology

Highly orientated polycrystalline ZnO films with hexagonal structure have been deposited on Si substrate by rf magnetron sputtering. Strong monochromatic green emission located at 490 nm has been observed when excited with 300 nm light at room temperature (RT). The photoluminescence (PL) intensity decreases with increasing oxygen pressure during film deposition and it increases by thermal annealing in vacuum. The green emission may correspond to the electron transition from deep oxygen vacancy level to the valance band.