Theoretical study on InxGa1−xN/GaN quantum dots solar cell

• DOI: 10.1016/j.physb.2010.10.020
• Publication Date: 2010-10-15T08:37:41Z
• Authors: Qingwen Deng; Xiaoliang Wang; Cuibai Yang; Hongling Xiao; Cuimei Wang; Haibo Yin; Qifeng Hou; Jinmin Li; Zhanguo Wang; Xun Hou
• Keywords: Homojunction; Multiple exciton generation; Indium gallium nitride

Abstract In this work, the structure of InxGa1−xN/GaN quantum dots solar cell is investigated by solving the Schrodinger equation in light of the Kronig–Penney model. Compared to p–n homojunction and heterojunction solar cells, the InxGa1−xN/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.