In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure

• DOI: 10.1016/j.physb.2017.03.013
• Publication Date: 2017-03-06T16:03:01Z
• Authors: Md. Earul Islam; Masashi Akabori
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs ( 111 ) B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [ 2 110 ] and [ 0 1 10 ] of hexagonal MnAs i.e. [ 1 10 ] and [ 11 2 ] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [ 1 10 ] and [ 11 2 ] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [ 11 2 ] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.