High Al-content AlGaN channel high electron mobility transistors on silicon substrate

• DOI: 10.1016/j.prime.2023.100114
• Publication Date: 2023-03-19T11:46:57Z
• Authors: J. Mehta; I. Abid; J. Bassaler; J. Pernot; P. Ferrandis; M. Nemoz; Y. Cordier; S. Rennesson; S. Tamariz; F. Semond; F. Medjdoub
• Keywords: AlGaN channel; [SPI] Engineering Sciences [physics]; 621; UWBG; 530; 01 natural sciences; 7. Clean energy; TK1-9971; [SPI]Engineering Sciences [physics]; 0103 physical sciences; AlGaN-on-Si AlGaN channel UWBG HEMT; AlGaN-on-Si; Electrical engineering. Electronics. Nuclear engineering; HEMT

The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging AlxGa1-xN channel based heterostructures are promising to enhance the limits of next generation high voltage GaN power switching devices. In this work, we report on the study of electrical performance of AlGaN channel HEMTs-on-Silicon using various Al content. The fabricated devices exhibited outstanding buffer breakdown electric field above 2.5 MV/cm considering the submicron thin heterostructures grown on silicon substrate. Furthermore, we also experimentally demonstrate high temperature operation of fabricated AlGaN channel HEMTs.