Broadband photodetector based on vertically stage-liked MoS2/Si heterostructure with ultra-high sensitivity and fast response speed

• DOI: 10.1016/j.scriptamat.2019.09.030
• Publication Date: 2019-09-26T18:50:19Z
• Authors: Junxiong Guo; Shangdong Li; Yizhen Ke; Zhicheng Lei; Yu Liu; Linna Mao; Tianxun Gong; Tiedong Cheng; Wen Huang; Xiaosheng Zhang
• Keywords: 02 engineering and technology; 0210 nano-technology; 01 natural sciences; 7. Clean energy; 0104 chemical sciences

Abstract We report a broadband photodetector based on vertically stage-liked MoS2/Si heterostructure with MoS2 sheet modified using rapid annealing technique. The fabricated photodetector features a unique structure of naturally formed band alignment in MoS2 after annealing and shows an ultra-high responsivity up to 746 mA W−1 and detectivity up to 6.03 × 1011 Jones ranging from 405 to 980 nm, as well exhibits a fast response speed with a rise time of ∼178 µs and fall time of ∼198 µs. The demonstrated superb photodetector suggests an effective way to form vertical p-n junction for improving the performances of future optoelectronic devices.