Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation

• DOI: 10.1016/j.sse.2012.10.007
• Publication Date: 2012-11-28T14:13:07Z
• Authors: Chang-Ki Baek; Daegun Kang; JeongSik Kim; Bo Jin; Taiuk Rim; Sooyoung Park; M. Meyyappan; Yoon-Ha Jeong; Jeong-Soo Lee
• Keywords: In2Se3 nanowire; SiO2 passivation; DEVICES; Phase change memory; Chalcogenide; 02 engineering and technology; 0210 nano-technology; 7. Clean energy; Low frequency noise

Abstract The resistive switching and low frequency noise characteristics in In 2 Se 3 nanowire PRAM devices with SiO 2 passivation have been studied. The SiO 2 passivation of the nanowires was adopted to lessen the thermal energy dissipation to the surroundings and as a result, the set/reset voltages and the corresponding power requirements have been reduced. The measured low frequency noise characteristics exhibit a typical 1/f noise behavior and show the same noise level after the SiO 2 passivation.