Field-induced resistance-switching of La0.7Ca0.3MnO3−δ films epitaxially grown on Ir/MgO buffered Si (001) substrates

• DOI: 10.1016/j.tsf.2005.04.115
• Publication Date: 2005-06-28T12:19:55Z
• Authors: Tong Lai Chen; Xiao Min Li; Rui Dong; Qun Wang; Li Dong Chen
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract Investigated was the epitaxial growth of La 0.7 Ca 0.3 MnO 3 (LCMO)/Ir/MgO multilayer on silicon substrate, which was prepared by pulsed-laser deposition. The whole growth process of multilayer was in situ monitored by using reflection high-energy electron diffraction (RHEED). The reflection high-energy electron diffraction observations and X-ray diffraction analysis show that the LCMO film can be epitaxially grown on silicon substrate with an out-of-plane alignment of LCMO(001)//Ir(001)//MgO(001)//Si (001). The field-induced polarity-dependent reversible resistance-switching was observed in the Ag–LCMO–Ir sandwich structure with a newly discovered accumulation-like phenomenon. Further characterization through I–V measurements for “ON”-/”OFF”-State shows that the resistance-switching phenomenon occurred in our Ag–LCMO–Ir sandwich structure should be attributed to a carrier-injection-ordering process.