Structural and ferroelectric properties of yttrium substituted bismuth titanium thin films

• DOI: 10.1016/j.tsf.2005.07.117
• Publication Date: 2005-08-09T07:30:18Z
• Authors: J. Ma; J. Gu; D. Su; X.M. Wu; C.H. Song; W. Li; X.M. Lu; J.S. Zhu
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract Yttrium substituted Bi 4− x Y x Ti 3 O 12 ( x = 0.00, 0.10, 0.30, 0.50, 0.75, 1.00) polycrystalline thin films were synthesized by metal-organic decomposition method. Ferroelectric measurements revealed that the Bi 4 Ti 3 O 12 (BTO) films substituted by Y with appropriate ratios could have higher remnant polarization and significantly improved fatigue behavior compared with BTO. The remnant polarization of the Bi 3.50 Y 0.50 Ti 3 O 12 capacitor reached 10 μC/cm 2 at an applied field about 120 kV/cm with nearly fatigue free property up to 10 10 cycles. By using Raman spectra, X-ray diffraction, and scanning electron microscope to analyze the structure and composition of the films, it was found that the Y substitution of Bi at A-site induces changes in film orientation and the lattice distortion that are probably responsible for the improved ferroelectric properties. The microstructure and its relation with the leakage behavior of these thin films were also discussed.