Growth of Fe–As crystalline films on GaAs(100) by molecular beam epitaxy

• DOI: 10.1016/j.tsf.2007.11.021
• Publication Date: 2007-11-20T12:20:48Z
• Authors: A.T.M.K. Jamil; H. Noguchi; H. Munekata
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences

Abstract Crystallinity and magnetic property of binary Fe–As compounds grown on GaAs(001) substrates by molecular beam epitaxy are described. At the substrate temperature of Ts = 300 °C or lower, the growth occurs in the form of polycrystalline diamagnetic FeAs2, whereas, at Ts = 400–500 °C, the growth of single-crystalline FeAs or Fe2As takes place depending on the relative amount of an As beam flux. At Ts = 600 °C, formation of polycrystalline FeAs with Fe–Ga–As ternary compounds starts to take place. Using these binary samples, magnetic susceptibility of FeAs2 and FeAs are extracted and compared with the bulk data. It is also revealed that these binaries do not exhibit photo-enhanced magnetization at room temperature.