Switching devices in sol–gel hybrid thin film technology

• DOI: 10.1016/j.tsf.2009.02.118
• Publication Date: 2009-02-28T09:37:32Z
• Authors: A. Dima; M. Dima; K.G. Watkins; G. Dearden; Dun Liu; C.J. Williams; M. Casalino; M. Gagliardi; I. Rendina; F.G. Della Corte
• Keywords: Bistability

Development of non-volatile memories based on organic soft materials is one of two main trends in industry for flash-memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast programming switching devices. SiO2-Rose Bengal (bis-triethylammonium) hybrid thin films are reported here together with their characterizations. The technology yields well reproducible films with good current-voltage switching characteristics. Owing to their physical and chemical stability the films are suited to standard micro-photolitography technology, rendering their fabrication cost-effective.