Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

0103 physical sciences 02 engineering and technology 0210 nano-technology 01 natural sciences
DOI: 10.1016/j.tsf.2011.10.119 Publication Date: 2011-10-31T23:44:45Z
ABSTRACT
Abstract In this work, digermane (Ge 2 H 6 ) is investigated as low temperature Ge precursor for Chemical Vapor Deposition. High quality Ge epitaxial growth on Si substrates is reported at temperatures as low as 275 °C and a specific Ge 2 H 6 surface reaction is proposed to explain the growth mechanism at those very low temperatures. In addition, we highlight that Ge 2 H 6 provides solutions, not covered by conventional GeH 4 , for various original Ge-based materials: direct deposition of amorphous Ge layers directly on dielectric or metallic surfaces, as well as the epitaxial growth of smooth, fully strained, monocrystalline GeSn layers on Ge substrates.
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