Transparent conductive ZnO:B films deposited by magnetron sputtering

• DOI: 10.1016/j.tsf.2012.05.014
• Publication Date: 2012-05-16T16:24:25Z
• Authors: Qian Huang; Yanfeng Wang; Shuo Wang; Dekun Zhang; Ying Zhao; Xiaodan Zhang
• Keywords: Absorption edge

Abstract This paper focuses on the preparation of boron doped ZnO (ZnO:B) films prepared by nonreactive mid-frequency magnetron sputtering from ceramic target with 2 wt.% doping source. Adjusting power density, ZnO:B film with low resistivity (1.54 × 10 − 3 Ω cm) and high transparency (average transparency from 400 to 1100 nm over 85%) was obtained. Different deposition conditions were introduced as substrate fixed in the target center and hydrogen mediation. Hall mobility increased from 11 to above 26 cm 2 /V·s, while carrier concentration maintained almost the same, leading to low resistivity of 6.45 × 10 − 4 Ω cm. Transmission spectra of ZnO:B films grown at various growth conditions were determined using a UV–visible-NIR spectrophotometer. An obvious blue-shift of absorption edge was obtained while transmittances between 600 nm and 1100 nm remained almost the same. Optical band baps extracted from transmission spectra showed irregular enhancement due to the Burstein–Moss effect and band gap renormalization. Photoluminescence spectra also showed a gradual increase at UV emission peak due to free exciton transition near band gap. We contributed this enhancement in both optical band gap and UV photoluminescence emission to the lattice structure quality melioration.