Spray pyrolysis deposition of Cu3BiS3 thin films
Spray pyrolysis
Deposition
DOI:
10.1016/j.tsf.2015.04.025
Publication Date:
2015-04-18T22:01:27Z
AUTHORS (5)
ABSTRACT
Abstract Wittichenite Cu 3 BiS 3 semiconductor thin films were deposited on glass slides within a range in substrate temperature from 250 °C to 400 °C via spray pyrolysis approach. Effects of substrate temperature on crystal structure, surface morphology, and optical property of Cu 3 BiS 3 films were investigated in details. Pictures from a scanning electron microscope revealed that the as-prepared films in polycrystalline nature were uniform and comprised of close-packed fine nanoparticles, which grew up greatly by increasing substrate temperature to 350 °C. The as-prepared Cu 3 BiS 3 film exhibited a direct optical band gap between 1.65 eV and 1.72 eV.
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