Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

• DOI: 10.1016/j.tsf.2015.11.020
• Publication Date: 2015-11-12T16:51:56Z
• Authors: K. Sawano; Y. Hoshi; S. Kubo; K. Arimoto; J. Yamanaka; K. Nakagawa; K. Hamaya; M. Miyao; Y. Shiraki
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract Structural and electrical properties of a Ge(111) layer directly grown on a Si(111) substrate are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer, where strain-relieving dislocations are confined close to a Ge/Si interface. Consequently, a density of holes, which unintentionally come from crystal defects, is highly suppressed below 4 × 10 16 cm − 3 , which leads to significantly high hole Hall mobility exceeding 1500 cm 2 /Vs at room temperature. By layer transfer of the grown Ge layer, we also fabricate a Ge(111)-on-Insulator, which is a promising template for high-performance Ge-based electronic and photonic devices.