Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

• DOI: 10.1016/j.tsf.2020.137825
• Publication Date: 2020-01-27T06:52:50Z
• Authors: Toshihiro Miyata; Hiroki Tokunaga; Kyosuke Watanabe; Noriaki Ikenaga; Tadatsugu Minami
• Keywords: Cavity magnetron

Abstract The photovoltaic properties of Cu2O-based heterojunction solar cells were improved using an n-type layer composed of thin films in a binary oxide semiconductor. This layer was prepared by a low-damage deposition method that applies a system for multi-chamber radio frequency (r.f.) power superimposed direct current (d.c.) magnetron sputtering. For an Al-doped ZnO (AZO)/n-ZnO/p-Cu2O heterojunction solar cell prepared using r.f. power superimposed d.c magnetron sputtering, we achieved the highest efficiency yet reported (3.22%) by optimizing sputtering conditions such as the substrate-target distance and the r.f.:d.c. power ratio. This value represents characteristics that exceed those of AZO/Cu2O solar cells having a similar structure based on r.f. power superimposed d.c magnetron sputtering.