Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

• DOI: 10.1016/j.tsf.2024.140246
• Publication Date: 2024-02-01T23:34:52Z
• Authors: Timur Malin; Yan Maidebura; Vladimir Mansurov; Tatyana Gavrilova; Anton Gutakovsky; Vladimir Vdovin; Sergey Ponomarev; Ivan Loshkarev; Igor Osinnykh; Vladimir Volodin; Denis Milakhin; Konstantin Zhuravlev