Systematic study of the influence of the Czochralski hot zone design on the point defect distribution with respect to a “perfect” crystal

• DOI: 10.1016/s1369-8001(02)00120-8
• Publication Date: 2003-04-05T02:09:52Z
• Authors: M Krause; J Friedrich; G Müller
• Keywords: Crystal (programming language)

Abstract In the present paper the influence of the hot zone design on the quality and yield of silicon crystals with 100 mm and 300 mm diameters is numerically studied using the software package CrysVUn. Based on the numerical results solutions for the design of the heat shields are identified which allow nominally to grow the crystals at higher growth velocities, and at the same time with improved quality in terms of smaller point defect concentrations and improved radial uniformity, compared to conventional hot zones.