Suppression of Cu agglomeration in the Cu/Ta/Si structure by capping layer

• DOI: 10.1016/s1468-6996(03)00067-6
• Publication Date: 2003-09-17T02:22:48Z
• Authors: J.-W. Lim; K. Mimura; M. Isshiki
• Keywords: Diffusion barrier

Cu/Ta/Si (100) structures deposited by the non-mass separated ion beam deposition system showed a slight resistivity increase at 650 °C due to Cu agglomeration. To suppress agglomeration on Ta layer, capping layer was structure using or SiO2 as suppressor. In case of suppressor, observed between two distorted films difference in thermal expansion filmand film high temperature. On other hand, found be suitable and did not occur even after annealing suppression diffusion.