Epitaxial Growth of Aurivillius Bi3Fe2Mn2Ox Supercell Thin Films on Silicon

Aurivillius Supercell
DOI: 10.1021/acs.cgd.2c01300 Publication Date: 2023-03-09T14:20:41Z
ABSTRACT
Nanoelectronic devices integrated with functional complex oxides have drawn much attention in recent years. However, due to material and processing compatibility issues, integrating Si-based is challenging, success has been limited. As an example, the Bi3Fe2Mn2Ox (BFMO) supercell system, a single-phase layered oxide made by compositing BiFeO3 BiMnO3, studied for of past decade its unusual Aurivillius structure magnetic ferroelectric properties. most BFMO thin film growth demonstrated on single-crystal substrates such as SrTiO3 LaAlO3. In this work, we demonstrate that phase can be Si high epitaxial quality using buffer stack TiN/SrTiO3/CeO2. Further understanding strain-controlled allowed integration. Microstructure, magnetic, ferroelectric, optical properties films characterized compared those substrates, demonstrating comparable physical Integrating multiferroic demonstrates potential practical device applications field effect transistors.
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