Thin Films of α-Quartz GeO2 on TiO2-Buffered Quartz Substrates

• DOI: 10.1021/acs.cgd.3c00476
• Publication Date: 2023-12-18T21:20:47Z
• Authors: Silang Zhou; Kit de Hond; Jordi Antoja-Lleo...; Václav Ocelík; Gertjan Koster; Guus Rijnders; Beatriz Noheda
• Keywords: Thermal Stability

α-Quartz (SiO2) is one of the most widely used piezoelectric materials. However, challenges associated with control crystallization and growth process limit its production to hydrothermal bulk crystals. GeO2 can also crystallize into α-quartz phase, a higher response better thermal stability than SiO2. In previous study, we have found that on nonquartz substrates shows tendency form spherulites randomized orientation; while epitaxial crystalline thin films take place quartz substrates. in latter case, α–β phase transition takes both during heating deteriorates long-range order and, thus, properties. Here, report ousting spherulitic by using buffer layer. Using TiO2 as layer, strain be transferred growing films, leading oriented phase. Moreover, since separates kept across substrate's transitions. Our findings reveal complexity present way eliminate for strain.