High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

• DOI: 10.1021/acs.cgd.5b00690
• Publication Date: 2015-06-29T14:07:33Z
• Authors: Johannes K. Zettler; Christian Hauswald; Pierre Corfdir; Mattia Musolino; Lutz Geelhaar; Henning Riechert; Oliver Brandt; Sergio Fernández-...
• Keywords: Wide-bandgap semiconductor

In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by long incubation time that precedes nanowire nucleation. this work, we present three unconventional growth approaches to minimize and thus facilitate significantly higher (up 875$^{\circ}$C). We achieve by: (i) using III/V flux ratios larger than one compensate for Ga desorption, (ii) introducing a two-step procedure, (iii) an AlN buffer layer favor The ensembles grown so far unexplored substrate exhibit excitonic transitions with sub-meV linewidths low-temperature photoluminescence spectra are comparable those state-of-the-art free-standing layers hydride vapor phase epitaxy.