Identification of Dislocations in Synthetic Chemically Vapor Deposited Diamond Single Crystals

• DOI: 10.1021/acs.cgd.6b00053
• Publication Date: 2016-03-30T21:56:53Z
• Authors: Alexandre Tallaire; Thierry Ouisse; Arthur Lantreibecq; Robin Cours; Marc Legros; Hakima Bensalah; Julien Barjon; Vianney Mille; Ovidiu Brinza; Jocelyn Achard
• Keywords: Characterization; Crystal (programming language)

High purity chemically vapor deposited (CVD) diamond single crystals are now widely available. However, the reduction of dislocations in this material still remains an important challenge that will strongly condition its adoption areas such as optics, electronics, and spintronics, where these defects have a disastrous effect on properties. In work we report methodology allows complete identification type, density, distribution high quality CVD crystal. A good agreement between all characterization techniques was established. When surface is adequately prepared, simple plasma etching evidencing 2 main dislocation types: 45° mixed edge, with latter one being dominant density around 4.5 × 104 cm–2. This investigation paves way to development quick process analyze toward getting better understanding their impact properties eventually elaborating strategies eliminate them.