Ferroelectric Domain Engineering Using Structural Defect Ordering

• DOI: 10.1021/acs.chemmater.2c01178
• Publication Date: 2022-07-14T15:42:48Z
• Authors: Elzbieta Gradausk...; Kasper A. Hunnestad; Quintin N. Meier; Dennis Meier; Morgan Trassin
• Keywords: Aurivillius; Domain engineering

Ferroelectrics have become indispensable in the development of energy-efficient oxide electronics. Their domain state is closely linked to final device functionality, making engineering technology-compatible thin films paramount importance. Here we demonstrate local control formation two-dimensional epitaxial ferroelectric using structural defect through substrate topography. Using a combination first-principles calculations, atom probe tomography, and scanning microscopy, show that out-of-phase boundaries induced at step edges combined with off-stoichiometry trigger walls layered Bi5FeTi3O15 Aurivillius films. The treatment miscut angle selection allow for precise size location both single layers multilayer architectures. With this work, establish new route stabilization functional ultrathin layers.