Area-Selective Deposition of Ruthenium Using Homometallic Precursor Inhibitor

• DOI: 10.1021/acs.chemmater.3c00525
• Publication Date: 2023-07-03T18:15:25Z
• Authors: Chi Thang Nguyen; Eun-Hyoung Cho; Ngoc Le Trinh; Bonwook Gu; Mingyu Lee; Sunghee Lee; Jeong-Yub Lee; Youngho Kang; Han-Bo-Ram Lee

Area-selective deposition (ASD) using a precursor inhibitor (PI) is promising alternative to self-assembled monolayer inhibitors due wide range of material selection and high process compatibility. In this study, bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] introduced as homometallic PI for the ASD Ru. The chemical reactivity steric hindrance between Ru(EtCp)2, Ru precursor, H2O are theoretically calculated density functional theory calculations Monte Carlo simulations. blocking property related packing Ru(EtCp)2 on surface, unoccupied sites degrade property. An additional pulse used hydrolyze remove Et groups create more space adsorption Ru(EtCp)2. As result, increases, leading an improvement in A single inhibits growth atomic layer (ALD) film 200 cycles, whereas with ALD up 300 cycles. Transmission electron microscopy results show that thin films purely metallic even after degradation This highlights possibility PIs future applications metal processes.