Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

• DOI: 10.1021/acs.chemmater.6b05214
• Publication Date: 2017-03-07T17:41:06Z
• Authors: Benjamin Groven; Markus Heyne; Ankit Nalin Mehta; Hugo Bender; Thomas Nuytten; Johan Meersschaut; Thierry Conard; Patrick Verdonck; Sven Van Elshocht; Wilfried Vandervorst; Stefan De Gendt; Marc Heyns; Iuliana Radu; Matty Caymax; Annelies Delabie
• Keywords: Deposition; Nanocrystalline material

Two-dimensional (2D) transition metal dichalcogenides are potential low dissipative semiconductor materials for nanoelectronic devices. Such applications require the deposition of these in their crystalline form and with controlled number monolayers on large area substrates, preferably using temperatures compatible temperature sensitive structures. This paper presents a plasma-enhanced atomic layer (PEALD) process 2D WS2 based ternary reaction cycle consisting consecutive WF6, H2 plasma, H2S reactions. Strongly textured, nanocrystalline is grown at 300 °C. The composition crystallinity layers depends PEALD conditions, as understood by model redox chemistry this process. plasma essential it enables reduction −W6+Fx surface species. Nevertheless, impact subsurface reactions needs to be minimized obtain well-controlled (S/W ratio 2).