Suppressing Carrier Recombination in BiVO4/PEDOT:PSS Heterojunction for High-Performance Photodetector

• DOI: 10.1021/acs.jpclett.4c00148
• Publication Date: 2024-02-26T16:41:51Z
• Authors: Zhe Liu; Jiaqi Li; Shaojie Liu; Yao Yuan; Ainong Chen; Haolin Yu; Shouxiong Wang; Jie Ding; Huajing Fang

The organic–inorganic hybrid heterojunction is introduced for the first time to break through performance bottleneck of BiVO4-based photodetectors. Through a facile solution process, p-n established at BiVO4/PEDOT:PSS interface, and built-in electric field designed separate photogenerated charge carriers. outputs significantly increased photocurrent, which 24 000 times larger than that bare BiVO4 thin film. photodetector shows satisfactory with responsivity (R) specific detectivity (D*) 107.8 mA/W 4.13 × 1010 Jones 482 nm illumination. In addition fast response speed (100 ms), device also exhibits an impressive long-term stability negligible attenuation in photocurrent after more 700 cycles. This work provides novel strategy suppress carrier recombination BiVO4, coupling metal oxides organic semiconductors opens up new avenue fabricating high-performance