Intrinsically Stretchable n-Type Polymer Semiconductors through Side Chain Engineering

• DOI: 10.1021/acs.macromol.1c00936
• Publication Date: 2021-09-15T18:13:41Z
• Authors: Yafei Ding; Ye Yuan; Ning Wu; Xiaohong Wang; Guobing Zhang; Longzhen Qiu
• Keywords: Side chain; Siloxane; Organic semiconductor

The development of intrinsically stretchable n-type polymer semiconductors is highly desirable for various wearable and implantable electronics. However, very few studies have reported high-performance conjugated polymers by molecular engineering. Herein, high electron mobility preservation under stretch-strains achieved changing the type grafted side chains as well increasing density chains. A series bis(2-oxoindolin-3-ylidene)-benzodifuran-dione (BIBDF)-based with different including alkyl hybrid siloxane-based was synthesized to investigate structure–property relationship. experimental results demonstrated that replacing branched linear greatly reduced crystallinity films improved flexibility resulting CSi-PBIBDF showed significantly enhanced mechanical properties while maintaining transport properties. Surprisingly, parallel stretching direction thin film reached 0.21 cm2 V–1 s–1 at 100% strain, which higher than unstretched state, attributed stretch-induced alignment chain. current study systematic chain engineering extremely important achieve semiconductors.