Chalcogenophene-Sensitive Charge Carrier Transport Properties in A–D–A′′–D Type NBDO-Based Copolymers for Flexible Field-Effect Transistors

• DOI: 10.1021/acs.macromol.8b01944
• Publication Date: 2018-10-24T03:58:25Z
• Authors: Keli Shi; Weifeng Zhang; Yankai Zhou; Congyuan Wei; Jianyao Huang; Qiang Wang; Liping Wang; Gui Yu
• Keywords: Electron Mobility; Chalcogen; Organic Electronics

The use of chalcogenophenes runs through the whole history developing high performance π-conjugated materials toward organic electronics devices. In this work, we report three A–D–A′–D type (3E,7E)-3,7-bis(2-oxo-1H-pyrrolo[2,3-b]pyridin-3(2H)-ylidene)benzo[1,2-b:4,5-b′]difuran-2,6(3H,7H)-dione- (NBDO-) based copolymers containing different chalcogenophenes, i.e., 4,7-di(thiophen-2-yl)benzo[c][1,2,5]thiadiazole (TTT), 4,7-di(selenophen-2-yl)benzo[c][1,2,5]thiadiazole (STS), or 4,7-di(selenophen-2-yl)benzo[c][1,2,5]selenadiazole (SSS). effects chalcogen atom on their optoelectronic properties were explored by a range techniques, including thermal, optical, electrochemical, computational, molecular aggregation, and carrier transport properties. Interestingly, both PNBDO-TTT PNBDO-STS formed highly ordered, crystalline, lamellar packing thin films with uniform intertwined fibrillar morphologies, whereas PNBDO-SSS only gave random film amorphous morphology, despite similar chemical structures, optical electrochemical consequence, PNBDO-STS-based flexible field-effect transistors PET substrate exhibited electron mobilities 2.41 2.68 cm2 V–1 s–1, respectively, PNBDO-SSS-based ones showed lowered mobility 0.012 s–1.