Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron–Hole Tube Structure

• DOI: 10.1021/acs.nanolett.0c00232
• Publication Date: 2020-02-26T22:20:20Z
• Authors: Xiaotian Zhu; Fengyuan Lin; Zhihong Zhang; Xue Chen; Hao Huang; Dengkui Wang; Jilong Tang; Xuan Fang; Dan Fang; Johnny C. Ho; Lei Liao; Zhipeng Wei
• Keywords: 02 engineering and technology; 0210 nano-technology

Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the I-type band structure, device can realize a two-dimensional electron-hole tube (2DEHT) structure for substantial performance enhancement. The 2DEHT is observed to form interface both sides of GaAs/AlGaAs barriers, which constructs effective pathways electron hole transport in reducing photocarrier recombination enhancing photocurrent. In particular, G/A/G NW exhibits responsivity 0.57 A/W detectivity 1.83 × 1010 Jones, are about 7 times higher than those pure GaAs device. probability has also been significantly suppressed from 81.8% 13.2% with utilization structure. All these evidently demonstrate importance appropriate promote generation, separation, collection high-performance optoelectronic devices.