Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials

• DOI: 10.1021/acs.nanolett.0c04149
• Publication Date: 2021-03-23T15:49:47Z
• Authors: Jijun He; Ioannis Paradisanos; Tianyi Liu; Alisson R. Cadore; Junqiu Liu; Mikhail Churaev; Rui Ning Wang; Arslan S. Raja; Clément Javerzac-...; Philippe Roelli; Domenico De Fazio; Barbara L. T. Rosa; Sefaattin Tongay; Giancarlo Soavi; Andrea C. Ferrari; Tobias J. Kippenberg
• Keywords: Nanophotonics

Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves way low-loss, hybrid circuits layered semiconductors, not requiring heterogeneous wafer bonding.