Efficient and Dense Electron Emission from a SiO2 Tunneling Diode with Low Poisoning Sensitivity

• DOI: 10.1021/acs.nanolett.1c04475
• Publication Date: 2022-01-24T17:24:40Z
• Authors: Zhiwei Li; Zhengfeng Zhang; Jiamin Tian; Gongtao Wu; Yidan He; Bocheng Yu; Fangyuan Zhan; Yuwei Wang; Mei Sun; Wei Yang; Zhihong Li; Qing Chen; Pengfei Yan; Xianlong Wei
• Keywords: 0103 physical sciences; 01 natural sciences

We report a tunneling diode enabling efficient and dense electron emission from SiO2 with low poisoning sensitivity. Benefiting the shallow channel exposed to vacuum affinity of (0.9 eV), hot electrons into cathode are efficiently emitted much less restriction in both space energy than those previous sources. Monte Carlo simulations on device performance show an efficiency as high 87.0% density up 3.0 × 105 A/cm2. By construction based Si conducting filaments electroformed SiO2, 83.7% 4.4 A/cm2 experimentally realized. Electron devices is demonstrated be independent pressure 10-4 10-1 Pa without poisoning.