ZnF2-Assisted Synthesis of Highly Luminescent InP/ZnSe/ZnS Quantum Dots for Efficient and Stable Electroluminescence
Hydrofluoric acid
Quantum yield
Thermal Stability
DOI:
10.1021/acs.nanolett.2c00763
Publication Date:
2022-05-10T15:50:53Z
AUTHORS (6)
ABSTRACT
High-quality InP-based quantum dots (QDs) have become very promising, environmentally benign light emitters for display applications, but their synthesis generally entails hazardous hydrofluoric acid. Here, we present a highly facile route to InP/ZnSe/ZnS core/shell/shell QDs with near-unity photoluminescence yield. As the key additive, inorganic salt ZnF2 mildly reacts carboxylic acid at high temperature and in situ generates HF, which eliminates surface oxide impurities, thus facilitating epitaxial shell growth. The resulting exhibit narrower emission line width better thermal stability comparison synthesized Light-emitting diodes using large-sized without replacing original ligands achieve highest peak external efficiency of 22.2%, best our knowledge, along maximum brightness >110 000 cd/m2 T95 lifetime >32 h 100 cd/m2. This safe approach is anticipated be applied wide range III–V QDs.
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