Realization of Ultra-Scaled MoS2 Vertical Diodes via Double-Side Electrodes Lamination

• DOI: 10.1021/acs.nanolett.2c00922
• Publication Date: 2022-05-26T15:03:57Z
• Authors: Wanying Li; Liting Liu; Quanyang Tao; Yang Chen; Zheyi Lu; Lingan Kong; Weiqi Dang; Wujun Zhang; Zhiwei Li; Qianyuan Li; Jie Tang; Liwang Ren; Wenjing Song; Xidong Duan; Chao Ma; Yuanjiang Xiang; Lei Liao; Yuan Liu
• Keywords: 0303 health sciences; 03 medical and health sciences

Schottky diode is the fundamental building blocks for modern electronics and optoelectronics. Reducing semiconductor layer thickness could shrink vertical size of a diode, improving its speed integration density. Here, we demonstrate new approach to fabricate with ultrashort physical length approaching atomic limit. By mechanically laminating prefabricated metal electrodes on both-sides two-dimensional MoS2, intrinsic metal-semiconductor interfaces can be well retained. As result, thinnest 2.6 nm decent rectification behavior. Furthermore, smaller than depletion length, carrier transport mechanisms are investigated explained by thickness-dependent temperature-dependent electrical measurements. Our study not only pushes scaling limit but also provides general double-sided other ultrathin devices.