Gate-Tunable Spin Hall Effect in an All-Light-Element Heterostructure: Graphene with Copper Oxide

• DOI: 10.1021/acs.nanolett.3c00687
• Publication Date: 2023-05-04T15:25:38Z
• Authors: Haozhe Yang; Maider Ormaza; Zhendong Chi; Eoin Dolan; Josep Ingla-Aynés; C.K. Safeer; Franz Herling; Nerea Ontoso; Marco Gobbi; Beatriz Martín-Ga...; Frederik Schiller; Luis E. Hueso; Fèlix Casanova
• Keywords: Spin diffusion

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time main drawback exhibiting sizable Hall effect. Decoration by atoms has been predicted enhance angle in graphene while retaining long diffusion length. Here, we combine metal oxide (oxidized Cu) with induce Its efficiency, given product of and length, can be tuned Fermi level position, maximum (1.8 ± 0.6 nm 100 K) around charge neutrality point. This all-light-element heterostructure shows larger efficiency than conventional materials. The gate-tunable effect observed up room temperature. Our experimental demonstration provides an efficient spin-to-charge conversion system free from heavy metals compatible large-scale fabrication.