Solar-Blind Avalanche Photodetector Based On Single ZnO–Ga2O3 Core–Shell Microwire

• DOI: 10.1021/acs.nanolett.5b00906
• Publication Date: 2015-05-06T16:17:21Z
• Authors: Bin Zhao; Fei Wang; Hongyu Chen; Yunpeng Wang; Mingming Jiang; Xiaosheng Fang; Dongxu Zhao
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

High-performance solar-blind (200-280 nm) avalanche photodetectors (APDs) were fabricated based on highly crystallized ZnO-Ga2O3 core-shell microwires. The responsivity can reach up to 1.3 × 10(3) A/W under -6 V bias. Moreover, the corresponding detectivity was as high 9.91 10(14) cm·Hz(1/2)/W. device also showed a fast response, with rise time shorter than 20 μs and decay of 42 μs. quality detectors in waveband is comparable or even higher that commercial Si APD (APD120A2 from Thorlabs Inc.), ∼8 A/W, ∼10(12) cm·Hz(1/2)/W, response ∼20 ns. performance this make it suitable for practical applications photodetectors, microstructure heterojunction design method would provide new approach realizing an device.