Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2

Free electron model Free carrier
DOI: 10.1021/acs.nanolett.5b01967 Publication Date: 2015-08-19T08:11:43Z
ABSTRACT
The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate optical response this material. Here, we use time- angle-resolved photoemission spectroscopy for a SL on metallic substrate directly measure free carriers. This allows us ascertain direct quasiparticle band gap 1.95 eV determine an ultrafast (50 fs) extraction carriers via metal contact with MoS$_2$. process is key importance optoelectronic applications rely separated rather than excitons.
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