Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2

• DOI: 10.1021/acs.nanolett.5b03727
• Publication Date: 2015-12-23T19:03:17Z
• Authors: Seunghyun Lee; Alvin Tang; Shaul Aloni; H.-S. Philip Wong
• Keywords: 0103 physical sciences; 01 natural sciences

Creating high-quality, low-resistance contacts is essential for the development of electronic applications using two-dimensional (2D) layered materials. Many previously reported methods for lowering the contact resistance rely on volatile chemistry that either oxidize or degrade in ambient air. Nearly all reported efforts have been conducted on only a few devices with mechanically exfoliated flakes which is not amenable to large scale manufacturing. In this work, Schottky barrier heights of metal-MoS2 contacts to devices fabricated from CVD synthesized MoS2 films were reduced by inserting a thin tunneling Ta2O5 layer between MoS2 and metal contacts. Schottky barrier height reductions directly correlate with exponential reductions in contact resistance. Over two hundred devices were tested and contact resistances extracted for large scale statistical analysis. As compared to metal-MoS2 Schottky contacts without an insulator layer, the specific contact resistivity has been lowered by up to 3 orders of magnitude and current values increased by 2 orders of magnitude over large area (>4 cm(2)) films.