Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

• DOI: 10.1021/acs.nanolett.5b04356
• Publication Date: 2016-02-11T16:27:04Z
• Authors: M. Fernando Gonza...; Sergey N. Shevchenko; Sylvain Barraud; J. Robert Johansson; Andrew J. Ferguson; Franco Nori; Andreas C. Betz
• Keywords: Quantum capacitance; Charge qubit

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper performance and scalability prospects field-effect transistors. However, those quantum effects, such as tunnelling coherence, can be harnessed to use existing CMOS for information processing. Here, we report observation coherent charge oscillations in a double dot formed silicon nanowire transistor detected via its dispersive interaction with radio-frequency resonant circuit coupled gate. Differential capacitance changes at inter-dot transitions allow us monitor state system strong-driving regime where observe emergence Landau-Zener-St{\"u}ckelberg-Majorana interference on phase response resonator. A theoretical analysis signal demonstrates that must included describe qubit-resonator interaction. Furthermore, Fourier pattern reveals coherence time, $T_2\approx 100$~ps. Our results demonstrate control readout simple open up possibility implement spin qubits technology.