Threshold Voltage Control through Solvent Doping of Monolayer MoS2 Transistors

• DOI: 10.1021/acs.nanolett.5c00734
• Publication Date: 2025-05-02T12:02:00Z
• Authors: Kathryn Neilson; Charles Mokhtarzadeh; Marc Jaikissoon; Robert K. A. Bennett; Pratyush Buragohain; Ashish Verma Penu...; Sai Siva Kumar Pi...; Carly Rogan; Azimkhan Kozhakhm...; Kirby Maxey; Scott Clendenning; Eric Pop; Matthew Metz; Uygar Avci; Kevin P. O’Brien
• Keywords: Gate voltage

Two-dimensional (2D) materials are promising for beyond-silicon logic due to their ultrathin bodies atomically thin channels. A key challenge lies in doping, enable high-performance devices with a predictable and tunable threshold voltage (VT), while retaining switching behavior. In this work, we explore n-doping monolayer MoS2 solvents of varying polarity both enhance transistor performance understand how impact the VT. We find that solvent predictably shifts VT when states available near conduction band. This VT, increases maximum on-current, is achieved without significant degradation subthreshold swing. also doping reduces Schottky barrier width, enabling two-fold reduction contact resistance. These findings provide method tune carrier concentrations by shifting offer clarity on role play processing 2D devices.