Electrical and Thermal Transport in Coplanar Polycrystalline Graphene–hBN Heterostructures
[PHYS]Physics [physics]
Thermoelectrics
Chemical vapour deposition
Thermal properties
Condensed Matter - Mesoscale and Nanoscale Physics
boron nitride; chemical vapor deposition; electrical properties; grain boundary; Polycrystalline graphene; thermal properties; thermoelectrics; Bioengineering; Chemistry (all); Materials Science (all); Condensed Matter Physics; Mechanical Engineering
FOS: Physical sciences
Grain boundary
02 engineering and technology
7. Clean energy
[PHYS] Physics [physics]
Boron nitride
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Electrical properties
Polycrystalline graphene
Chemical vapor deposition
0210 nano-technology
DOI:
10.1021/acs.nanolett.6b04936
Publication Date:
2017-02-14T15:21:44Z
AUTHORS (8)
ABSTRACT
We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. By increasing the hBN grain density from a few percents to $100\%$, the system evolves from a good conductor to an insulator, with the mobility dropping by orders of magnitude and the sheet resistance reaching the M$��$ regime. The Seebeck coefficient is suppressed above $40\%$ mixing, while the thermal conductivity of polycrystalline hBN is found to be on the order of $30-120\,{\rm W}{\rm m}^{-1}{\rm K}^{-1}$. These results, agreeing with available experimental data, provide guidelines for tuning G-hBN properties in the context of two-dimensional materials engineering. In particular, while we proved that both electrical and thermal properties are largely affected by morphological features (like e.g. by the grain size and composition), we find in all cases that nm-sized polycrystalline G-hBN heterostructures are not good thermoelectric materials.
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