Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

• DOI: 10.1021/acs.nanolett.6b05097
• Publication Date: 2017-02-07T18:29:21Z
• Authors: Shula Chen; Mattias Jansson; Jan E. Stehr; Yuqing Huang; Fumitaro Ishikawa; Weimin M. Chen; Irina A. Buyanova
• Keywords: Passivation

Nanowire (NW) lasers operating in the near-infrared spectral range are of significant technological importance for applications telecommunications, sensing, and medical diagnostics. So far, lasing within this has been achieved using GaAs/AlGaAs, GaAs/GaAsP, InGaAs/GaAs core/shell NWs. Another promising III-V material, not yet explored its capacity, is dilute nitride GaNAs. In work, we demonstrate, first time, optically pumped from GaNAs shell a single GaAs/GaNAs NW. The characteristic "S"-shaped pump power dependence intensity, with concomitant line width narrowing, observed, which yields threshold gain, gth, 3300 cm-1 spontaneous emission coupling factor, β, 0.045. dominant peak identified to arise HE21b cavity mode, as determined pronounced polarization along NW axis combined theoretical calculations guided modes inside nanowire. Even without intentional passivation surface, can be sustained up 150 K. This facilitated by improved surface quality due nitrogen incorporation, partly suppresses surface-related nonradiative recombination centers via nitridation. Our work therefore represents step toward development room-temperature infrared based on nitrides extended tunability wavelength.